| PART |
Description |
Maker |
| GC44101 GC4495 GC4491 GC4494 GC4490 GC4492 GC4493 |
CONTROL DEVICES - HIGH VOLTAGE PIN DIODES
300 V, SILICON, PIN DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| CS20-22MOF1 |
High Voltage Phase Control Thyristorin High Voltage ISOPLUS i4-PAC-TM 28.26 A, 2200 V, SCR
Phase Control Thyristors: PowerThyristor for Line Frequency Rectification
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LC7536R |
High Breakdown Voltage Serial Control Electronic Volume Control(高击穿电压串行数据控制电子音量控 高击穿电压串行控制电子音量控制（高击穿电压串行数据控制电子音量控制）
CMOS LSI
|
Sanyo Electric Co., Ltd.
|
| 2SC3515 E000852 |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) npn型三重扩散型（高压控制，等离子显示器，数码管驱动器，阴极射线管的亮度控制应用
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
From old datasheet system
HIGH VOLYAGE CONTROL APPLICATIONS PLASMA DISPLAY,
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SA1432 |
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| LC7535M |
Electronic Volume/Loudness Control with Serial Data Control and High Voltage-Handling Capacity
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
|
TOSHIBA
|
| PK2 PK5 PK3 PK10 PK15 |
Pulstors Resistors for high voltage peak pulsing energy control , high frequency non-inductive 高压脉冲能量控制，高频无感电阻峰Pulstors
|
Willow Technologies Limited
Willow Technologies, Ltd.
|
| IDT72V51453 IDT72V51433 IDT72V51443 |
3.3V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| IDT72V51336 IDT72V51346 IDT72V51356 |
3.3V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| CX380D5 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:15VDC; Control Voltage Min:4VDC; Load Current Max:5A; Switching:Zero Cross; Operating Voltage Max:530V
|
CRYDOM CORP
|
